Preparation of homogeneous VOX thin films by ion beam sputtering and annealing process

Polycrystalline VOx thin films that were prepared for thermal-sensitive material of far infrared sensor had been deposited on Si substrates by ion beam sputtering deposition. Scanning electron microscopy images indicated that VOx thin films (oxygen pressure of 1.5 x 10(-3) Pa) were grown into compact and ultra-fine grains (less than or equal to 50 nm), the film surfaces seemed smooth and uniform. Four-point probe measurements showed that the homogeneity of the films was better than 98% in a size of 30 x 30 mm(2). The four-point probe measurement on hot plate presented the sheet resistance and the temperature coefficient of resistance of the VOx thin film that were 50 kOmega/square and -0.021 K-1 at 28degreesC, respectively. In addition, some samples annealed in Ar atmosphere had their resistance decreased. Thus, vanadium oxide films containing more amount VO2 were obtained. (C) 2004 Elsevier Ltd. All rights reserved.