Surface roughness reducing effect of iodine sources (CH3I, C2H5I) on Ru and RuO2 composite films grown by MOCVD

被引：29

作者：

Kim, JJ ^{[1
]}

Jung, DH

Kim, MS

Kim, SH

Yoon, DY

机构：

[1] Seoul Natl Univ, Sch Chem Engn, Seoul 151742, South Korea

[2] Kwangwoon Univ, Dept Chem Engn, Seoul 4471, South Korea

来源：

THIN SOLID FILMS | 2002年 / 409卷 / 01期

关键词：

chemical vapor deposition; surface roughness; ruthenium;

D O I：

10.1016/S0040-6090(02)00098-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ru and RuO2 composite films were deposited on TiN/Ti/Si substrate by metal-organic chemical vapor deposition (MOCVD) for application as the bottom electrode of a high density DRAM capacitor. The effects of iodine sources (CH3I, G(2)H(5)I) on composite films deposited at 300 degreesC were investigated. Iodine sources enhanced nucleation dramatically at the initial deposition stage, and the surface roughness of the films was reduced considerably. The root-mean-square (r.m.s.) surface roughness of composite films that were grown up to 1000 Angstrom with no addition, CH3I and C2H5I were 162, 48 and 38 Angstrom, respectively. Moreover, iodine sources did not affect the orientation or deposition rate of films. (C) 2002 Elsevier Science BV All rights reserved.

引用

页码：28 / 32

页数：5

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