Super-flat interfaces in pseudomorphic In0.72Ga0.28As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

被引：17

作者：

Aoki, T ^{[1
]}

Kitada, T ^{[1
]}

Shimomura, S ^{[1
]}

Hiyamizu, S ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.591435

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated flatness of heterointerfaces in pseudomorphic In0.72Ga0.28As/In0.52Al0.48As quantum wells (QWs) with well widths L-w of 1.3, 1.7, and 3.4 nm grown on (411)A InP substrates by molecular beam epitaxy (MBE). Full width at half maximum of a photoluminescence (12 K) peak from the (411)A QW with L-w = 1.3 nm was as narrow as 20.7 meV, which is 28% smaller than that (28.9 meV) of the corresponding QW grown on a conventional (100) InP substrate. This result indicates that effectively atomically flat interfaces [(411)A super-flat interfaces] were successfully formed, for the first time, in pseudomorphic In(0.72)Cra(0.28)As/In0.52Al0.48As QWs grown on the (411)A InP substrate by MBE. (C) 2000 American Vacuum Society.

引用

页码：1598 / 1600

页数：3

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