Surface segregation determination by epitaxy temperature steps

被引：7

作者：

Kasper, E ^{[1
]}

Oehme, M ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Halbleitertech, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 24期

关键词：

D O I：

10.1063/1.126710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method for determination of surface segregation during molecular-beam epitaxy is proposed. At constant beam fluxes, the temperature is switched which causes a segregation-dependent doping profile. The segregation ratio is extracted from the integrated profile avoiding problems with limited depth resolution in the nanometer regime. The method was tested with boron segregation on (100) silicon (T = 500-700 degrees C). A clear proof of the concentration dependence of the boron segregation is given. At 600 degrees C, the segregation ratio r(s) decreases from 55 to 12 nm when the doping level is increased from 3.5 x 10(18) to 7.5 x 10(19) cm(-3). (C) 2000 American Institute of Physics. [S0003-6951(00)02524-9].

引用

页码：3573 / 3575

页数：3

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