Passive temperature compensation of uncooled GaInAsP-InP diode lasers using thermal stress

被引：10

作者：

Cohen, DA

Coldren, LA

机构：

[1] Dept. of Elec. and Comp. Engineering, University of California, Santa Barbara

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1997年 / 3卷 / 02期

关键词：

distributed-feedback lasers; multiplexing; photoelastic materials/devices; semiconductor lasers; strain; stress; temperature control; wavelength-division multiplexing; QUANTUM-WELL LASERS; IN1-XGAXASYP1-Y; OPERATION; GAAS;

D O I：

10.1109/2944.605717

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strain arising from differential thermal expansion may be used to compensate the effects of rising temperature and stabilize the operating properties of diode lasers. We have demonstrated this using a 1.58-mu m GaInAsP-InP multiquantum-well (MQW) laser mounted on a bimetallic heatsink, obtaining nearly complete stabilization of the modal wavelength and a threshold current equivalent characteristic temperature of 133 K over the temperature range of 20 degrees C-70 degrees C. The results are successfully modeled by a gain calculation that considers the effects of strain produced by both lattice-mismatched epitaxy and external uniaxial stress.

引用

页码：649 / 658

页数：10

共 37 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].