Molecular beam epitaxy of BeTe on vicinal Si(100) surfaces

被引：16

作者：

Zhou, XC ^{[1
]}

Jiang, S ^{[1
]}

Kirk, WP ^{[1
]}

机构：

[1] TEXAS A&M UNIV,NANOFAB CTR,COLLEGE STN,TX 77843

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0022-0248(96)00911-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

BeTe was epitaxially grown on vicinal Si(1 0 0) substrates for the first time. Reflection high energy electron diffraction (RHEED) was used to study the initial growth mode and the surface structure. Transmission elect ron microscopy (TEM) was used to study the crystal quality. The material was grown on both bare and arsenic covered vicinal Si(1 0 0) surfaces. Smooth and well-ordered surface structures readily formed during the growth. Low stacking-fault densities were obtained in the BeTe epilayers. The potential applications of the new material are discussed briefly.

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页码：624 / 631

页数：8

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