Inkjet-Printed High Mobility Transparent-Oxide Semiconductors

被引：61

作者：

Han, Seung-Yeol ^{[1
]}

Lee, Doo-Hyoung ^{[1
]}

Herman, Gregory S. ^{[2
]}

Chang, Chih-Hung ^{[1
]}

机构：

[1] Oregon State Univ, Sch Chem Biol & Environm Engn, Corvallis, OR 97331 USA

[2] Hewlett Packard Corp, Corvallis, OR USA

来源：

JOURNAL OF DISPLAY TECHNOLOGY | 2009年 / 5卷 / 12期

基金：

美国国家科学基金会;

关键词：

Inkjet printing; solution-based process; thin-film transistors (TFTs); transparent oxide semiconductors; THIN-FILM TRANSISTORS; HIGH-PERFORMANCE; TEMPERATURE FABRICATION;

D O I：

10.1109/JDT.2009.2024330

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report a general and low-cost process to fabricate high mobility metal-oxide semiconductors that is suitable for thin-film electronics. This process use simple metal halide precursors dissolved in an organic solvent and is capable of forming uniform and continuous thin films via inkjet-printing or spin-coating process. This process has been demonstrated to deposit a variety of semiconducting metal oxides include binary oxides (ZnO, In2O3, SnO2 Ga2O3), ternary oxides (ZIO, ITO, ZTO, IGO) and quaternary compounds (IZTO, IGZO). Functional thin film transistors with high field-effect mobility were fabricated successfully using channel layers deposited from this process. This synthetic pathway opens an avenue to form patterned metal oxide semiconductors through a simple and low-cost process and to fabricate high performance transparent thin film electronics via digital fabrication processes on large substrates.

引用

页码：520 / 524

页数：5

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