Electron and hole transport through quantum dots

被引:34
作者
Li, SS
Abliz, A
Yang, FH
Niu, ZC
Feng, SL
Xia, JB
Hirose, K
机构
[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[2] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
关键词
D O I
10.1063/1.1518754
中图分类号
O59 [应用物理学];
学科分类号
摘要
The transmission through quantum dots (QDs) is calculated using the recursion method. In our calculation, the effect of finite offset is taken into account. The results show that the shapes of the QDs determine the number of resonant tunneling peaks and the distances between the peaks decrease as the radii of the QDs increase. The intensities of the conductance are strongly dependent on the barrier widths. The conductance peaks are split when transmitting through two QDs. The theoretical results qualitatively agree with the available experimental data. Our calculated results should be useful for the application of QDs to photoelectric devices. (C) 2002 American Institute of Physics.
引用
收藏
页码:6662 / 6665
页数:4
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