Implantation and dry etching of group-III-nitride semiconductors

被引：51

作者：

Zolper, JC

Shul, RJ

机构：

来源：

MRS BULLETIN | 1997年 / 22卷 / 02期

关键词：

D O I：

10.1557/S0883769400032553

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：36 / 43

页数：8

共 69 条

[1] REACTIVE ION ETCHING OF GALLIUM NITRIDE IN SILICON TETRACHLORIDE PLASMAS [J].

ADESIDA, I ;

MAHAJAN, A ;

ANDIDEH, E ;

KHAN, MA ;

OLSEN, DT ;

KUZNIA, JN .

APPLIED PHYSICS LETTERS, 1993, 63 (20) :2777-2779

[2] CHARACTERISTICS OF CHEMICALLY ASSISTED ION-BEAM ETCHING OF GALLIUM NITRIDE [J].

ADESIDA, I ;

PING, AT ;

YOUTSEY, C ;

DOW, T ;

KHAN, MA ;

OLSON, DT ;

KUZNIA, JN .

APPLIED PHYSICS LETTERS, 1994, 65 (07) :889-891

[3] THE DEPENDENCE OF ALUMINUM NITRIDE FILM CRYSTALLOGRAPHY ON SPUTTERING PLASMA COMPOSITION [J].

AITA, CR ;

GAWLAK, CJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (02) :403-406

[4]

AKASAKI I, 1991, J LUMIN, V48-9, P666

[5] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].

AMANO, H ;

KITO, M ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114

[6]

BARRETT NJ, 1985, J APPL PHYS, V57, P470

[7] MICROWAVE PERFORMANCE OF GAN MESFETS [J].

BINARI, SC ;

ROWLAND, LB ;

KRUPPA, W ;

KELNER, G ;

DOVERSPIKE, K ;

GASKILL, DK .

ELECTRONICS LETTERS, 1994, 30 (15) :1248-1249

[8] H, He, and N implant isolation of n-type GaN [J].

Binari, S.C. ;

Dietrich, H.B. ;

Kelner, G. ;

Rowland, L.B. ;

Doverspike, K. ;

Wickenden, D.K. .

Journal of Applied Physics, 1995, 78 (05)

[9] COMPARISON OF DAMAGE IN THE DRY ETCHING OF GAAS BY CONVENTIONAL REACTIVE ION ETCHING AND BY REACTIVE ION ETCHING WITH AN ELECTRON-CYCLOTRON RESONANCE GENERATED PLASMA [J].

CHEUNG, R ;

LEE, YH ;

LEE, KY ;

SMITH, TP ;

KERN, DP ;

BEAUMONT, SP ;

WILKINSON, CDW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1462-1466

[10] GALLIUM NITRIDE FILMS [J].

CHU, TL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) :1200-&

← 1 2 3 4 5 6 7 →