Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 films

被引：35

作者：

Luo, JS ^{[1
]}

Lin, WT ^{[1
]}

Chang, CY ^{[1
]}

Tsai, WC ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,DEPT ELECT ENGN,HSINCHU,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 07期

关键词：

D O I：

10.1063/1.365683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pulsed KrF laser annealing can suppress the island structure formation and Ge segregation associated with the interfacial reactions of Ni/Si0.76Ge0.24 For the Ni/Si0.76Ge0.24 films annealed at an energy density of 0.1-0.3 J/cm(2) nickel germanosilicide associated with the amorphous overlayer was formed, while at energy densities above 0.4 J/cm(2) cellular structures of Ge-deficient S1-xGex islands surrounded by Ni(Si1-xGex)(2) due to the constitutional supercooling occurred. For the continuous Ni(Si1-xGex) films grown at 200 degrees C, subsequent laser annealing at a higher energy density of 0.6-1.0 J/cm(2) caused transformation into homogeneous Ni(Si0.76Ge0.24)(2) films without island structure and Ge deficiency which readily appeared on furnace annealing at temperatures above 400 degrees C. At energy densities above 1.6 J/cm(2) the same cellular structures as described above were also noted. (C) 1997 American Institute of Physics.

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页码：3621 / 3623

页数：3

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