Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors

被引：67

作者：

Yildirim, F. A.

Ucurum, C.

Schliewe, R. R.

Bauhofer, W.

Meixner, R. M.

Goebel, H.

Krautschneider, W.

机构：

[1] Hamburg Univ Technol, Inst Opt & Elect Mat, D-21073 Hamburg, Germany

[2] Hamburg Univ Technol, Inst Nanoelect, D-21073 Hamburg, Germany

[3] Helmut Schmidt Univ, Univ Fed Armed Force, Dept Elect, D-22043 Hamburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 08期

关键词：

D O I：

10.1063/1.2591314

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on a solution-processed composite film based on poly(vinylidene fluoride/trifluoroethylene) copolymer and barium titanate (BT) nanopowder, to be used as ferroelectric high-kappa gate insulation in organic field-effect transistors (OFETs). Flexible films of up to 50 vol % BT powder content are produced by preparing homogeneous dispersion of the powder in the polymer solutions. The films exhibited high specific volume resistivities combined with dielectric constants of up to 51.5 at 1 kHz. Low-voltage OFETs with ferroelectric hysteresis and good memory retention properties were demonstrated by using the composite films. (c) 2007 American Institute of Physics.

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页数：3

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