Surface passivation of GaAs by ultra-thin cubic GaN layer

被引：42

作者：

Anantathanasarn, S

Ootomo, S

Hashizume, T

Hasegawa, H

机构：

[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Kita Ku, Sapporo, Hokkaido 0608628, Japan

[2] Hokkaido Univ, Grad Sch Elect & Informat Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan

来源：

APPLIED SURFACE SCIENCE | 2000年 / 159卷

关键词：

surface passivation; GaAs; GaN; nitrogen radicals; XPS; PL;

D O I：

10.1016/S0169-4332(00)00077-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Attempts were made to passivate the GaAs (001) surface by a pseudomorphic ultra-thin cubic GaN layer formed by a nitrogen radical (N-radical) or nitrogen plasma irradiation technique. Reflection high-energy electron diffraction (RHEED) pattern observations and detailed X-ray photoelectron spectroscopy (XPS) analysis have shown that ultra-thin cubic GaN layer on GaAs (001) surface with desirable surface stoichiometry can be realized with the optimization of surface nitridation process parameters. The passivation effects, characterized by ultra-high vacuum photoluminescence (UHV FL) analysis, revealed strong enhancement in band-edge PL intensity of GaAs after passivation as large as a factor of 10 when compared with the as-gown clean molecular beam epitaxy (MBE) GaAs surface. (C) 2000 Elsevier Science B.V. All rights reserved.

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页码：456 / 461

页数：6

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