Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD

被引：2

作者：

Chalker, PR

Marshall, PA

Potter, RJ

Joyce, TB ^{[1
]}

Jones, AC

Taylor, S

Noakes, TCQ

Bailey, P

机构：

[1] Univ Liverpool, Dept Mat Sci & Engn, Liverpool L69 3GH, Merseyside, England

[2] Univ Liverpool, Dept Chem, Liverpool L69 3BX, Merseyside, England

[3] Univ Liverpool, Surface Sci Res Ctr, Liverpool L69 3BX, Merseyside, England

[4] Univ Liverpool, Dept Elect Engn & Elect, Liverpool L69 3BX, Merseyside, England

[5] Epichem Oxides & Nitrides, Wirral, Merseyside, England

[6] CCLRC Daresbury Lab, Warrington, Cheshire, England

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2004年 / 15卷 / 11期

关键词：

D O I：

10.1023/B:JMSE.0000043417.59029.d6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The hafnium and silicon precursors, Hf(NMe2)(4) and (BuMe2SiOH)-Me-t, have been investigated for the MOCVD of high-kappa hafnium silicate, (HfO2)(1-x)-(SiO2)(x) films for gate dielectric applications. Control of the silica concentration in the hafnium silicate can be achieved by varying the relative precursor ratios up to a saturation level of 35-40% SiO2. The thermal stability of the resulting hafnium silicate films in air has been investigated using medium energy ion scattering. Internal oxidation of the underlying silicon substrate is discernable when the films are annealed in dry air for 15 min over the temperature range 800-1000 degreesC. (C) 2004 Kluwer Academic Publishers.

引用

页码：711 / 714

页数：4

共 14 条

[1] A medium energy ion scattering study of the structure of Sb overlayers on Cu(111) [J].