Epitaxial aluminum nitride films on sapphire formed by pulsed laser deposition

被引：29

作者：

Six, S ^{[1
]}

Gerlach, JW ^{[1
]}

Rauschenbach, B ^{[1
]}

机构：

[1] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

来源：

THIN SOLID FILMS | 2000年 / 370卷 / 1-2期

关键词：

aluminum nitride; laser ablation; epitaxy; X-ray diffraction;

D O I：

10.1016/S0040-6090(00)00960-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly oriented aluminum nitride thin films were grown on sapphire (0001)-substrate by pulsed laser deposition technique. Characterization was done by X-ray-diffraction, elastic recoil detection analysis and Rutherford backscattering/channeling measurements. The epitaxial properties were studied as function of the substrate temperature and the deposition rate. An epitaxial relation to the sapphire substrate is found to be AIN [0001] \\ Al2O3 [0001] and AIN [1120] \\ Al2O3 [1010]. XRD-texture-analysis on films deposited at 850 degrees C shows a full width half maximum Delta omega of 0.13 degrees (rocking curve) and Delta(Psi) of 1.1 degrees tin-plane). (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：1 / 4

页数：4

共 10 条

[1]

ASSMANN W, 1992, NUCL INSTRUM METH B, V64, P2267

[2]

DOLITTLE LR, 1985, NUCL INSTRUM METH B, V9, P344

[3] GROWTH OF EPITAXIAL ALN(0001) ON SI(111) BY REACTIVE MAGNETRON SPUTTER-DEPOSITION [J].