Transport properties of Be- and Si-doped AlSb

被引：17

作者：

Bennett, BR ^{[1
]}

Moore, WJ ^{[1
]}

Yang, MJ ^{[1
]}

Shanabrook, BV ^{[1
]}

机构：

[1] USN, Res Lab, Div Elect Sci & Technol, Washington, DC 20375 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 11期

关键词：

D O I：

10.1063/1.373470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thick epitaxial layers of AlSb(Si) and AlSb(Be) were grown by molecular beam epitaxy and characterized by variable-temperature Hall/van der Pauw measurements. Si is shown to be predominantly an acceptor in AlSb, with an energy level 33 +/- 4 meV above the top of the valence band. Be is also an acceptor, with an energy level 38 +/- 4 meV above the top of the valence band. Be is a robust doping source for p-AlSb for carrier densities ranging from 10(15) to 10(19) cm(-3). Background impurity levels in AlSb can be assessed by measuring the transport properties of lightly doped AlSb(Be) layers. (C) 2000 American Institute of Physics. [S0021- 8979(00)00811-2].

引用

页码：7876 / 7879

页数：4

共 25 条

[1]

BENNETT BR, 1999, HETEROEPITAXY THIN F, P401

[2] AlSb/InAs HEMT's for low-voltage, high-speed applications [J].

Boos, JB ;

Kruppa, W ;

Bennett, BR ;

Park, D ;

Kirchoefer, SW ;

Bass, R ;

Dietrich, HB .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (09) :1869-1875

[3] 0.1μm AlSb/InAs HEMTs with InAs subchannel [J].

Boos, JB ;

Yang, MJ ;

Bennett, BR ;

Park, D ;

Kruppa, W ;

Yang, CH ;

Bass, R .

ELECTRONICS LETTERS, 1998, 34 (15) :1525-1526

[4] Atomic antimony for molecular beam epitaxy of high quality III-V semiconductor alloys [J].

Brewer, PD ;

Chow, DH ;

Miles, RH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2335-2338

[5] ELECTRON ACCUMULATION AT UNDOPED ALSB-INAS QUANTUM-WELLS - THEORY [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1993, 47 (20) :13478-13484

[6] MOLECULAR-BEAM EPITAXY OF AISB [J].

CHANG, CA ;

TAKAOKA, H ;

CHANG, LL ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :983-985

[7] Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers [J].

Cheng, XC ;

McGill, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :2291-2295

[8] InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits [J].

Chow, DH ;

Dunlap, HL ;

Williamson, W ;

Enquist, S ;

Gilbert, BK ;

Subramaniam, S ;

Lei, PM ;

Bernstein, GH .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (02) :69-71

[9] STRUCTURAL AND TRANSPORT-PROPERTIES OF INAS/ALSB SUPERLATTICES [J].

CHOW, DH ;

ZHANG, YH ;

MILES, RH ;

DUNLAP, HL .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :879-882

[10] PHOTOLUMINESCENCE OF INAS/ALSB SINGLE QUANTUM-WELLS [J].

FUCHS, F ;

SCHMITZ, J ;

OBLOH, H ;

RALSTON, JD ;

KOIDL, P .

APPLIED PHYSICS LETTERS, 1994, 64 (13) :1665-1667

← 1 2 3 →