Radiative recombination mechanisms in high brightness Nichia blue LEDs

被引：2

作者：

Osinski, M

Eliseev, PG

机构：

[1] Univ of New Mexico, Albuquerque, United States

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 02期

关键词：

D O I：

10.1016/S0038-1101(97)82547-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoluminescence spectra from GaN/In0.05Ga0.95 N/Al0.15Ga0.85N heterostructure material used in Nichia LEDs are analyzed in order to obtain a quantitative understanding of radiative recombination mechanisms. The emission contains several bands, due to edge-related transitions and to radiative processes through Zn acceptor levels and in donor-acceptor pairs. The wide blue band is treated in terms of configuration-coordinate phonon-assisted transitions and parameters of the Zn-related centers in InGaN are estimated (phonon coupling strength, zero-phonon line position, binding energy of carriers). (C) 1997 Elsevier Science Ltd.

引用

页码：155 / 157

页数：3

共 7 条

[1] ROOM-TEMPERATURE VIOLET STIMULATED-EMISSION FROM OPTICALLY PUMPED ALGAN/GAINN DOUBLE-HETEROSTRUCTURE [J].