Study of indium droplets formation on the InxGa1-xN films by single crystal x-ray diffraction

被引：23

作者：

Lu, HQ ^{[1
]}

Thothathiri, M ^{[1
]}

Wu, ZM ^{[1
]}

Bhat, I ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST, DEPT MAT ENGN, TROY, NY 12180 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1997年 / 26卷 / 03期

关键词：

indium gallium nitride (InxGa1-xN); metalorganic chemical vapor deposition (MOCVD); photoluminescence (PL); single crystal x-ray diffraction;

D O I：

10.1007/s11664-997-0164-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium droplet formation during the epitaxial growth of InxGa1-xN films is a serious problem for achieving high quality films with high indium mole fraction. In this paper, we studied the formation of indium droplets on the InxGa1-xN films grown by metalorganic chemical vapor deposition (MOCVD) using single crystal. x-ray diffraction. It is found that the indium (101) peak in the x-ray diffraction spectra can be utilized as a quantitative measure to determine the amounts of indium droplets on the film. It is shown by monitoring the indium diffraction peak that the density of indium droplets increases at lower growth temperature. To suppress these indium droplets, a modulation growth technique is used. Indium droplet formation in the modulation growth is investigated and it is revealed in our study that the indium droplets problem has been partially relieved by the modulation growth technique.

引用

页码：281 / 284

页数：4

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