Study of nitrous oxide plasma oxidation of silicon nitride thin films

被引：10

作者：

Bose, M

Basa, DK ^{[1
]}

Bose, DN

机构：

[1] Utkal Univ, Dept Phys, Bhubaneswar 751004, Orissa, India

[2] Indian Inst Technol, Ctr Adv Technol, Kharagpur 721302, W Bengal, India

来源：

APPLIED SURFACE SCIENCE | 2000年 / 158卷 / 3-4期

关键词：

plasma oxidation; elastic backscattering; C-V measurement; insulator charge density; interface state density; PECVD;

D O I：

10.1016/S0169-4332(00)00023-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A novel oxidation process for silicon nitride films of various compositions have been undertaken utilizing nitrous oxide (N2O) plasma. Careful studies using elastic backscattering (EBS) technique to determine the composition and capacitance-voltage (C-V) measurements to determine the insulator charge density (Q(o)) and the interface state density (D-it) have been made on the films before and after N2O plasma oxidation. The incorporation of oxygen into the silicon nitride films of various compositions due to the N2O plasma treatment is confirmed. The insulates charge density (Q(o)) as well as the minimum interface state density (D-it)(min) are observed to be more for the N2O oxidized samples compared with the corresponding virgin samples. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：275 / 280

页数：6

共 22 条

[11]

KRUANGAM D, 1993, J NON-CRYST SOLIDS, V166, P809, DOI 10.1016/0022-3093(93)91120-R

[12] CONTROL OF BONDED-HYDROGEN IN PLASMA-DEPOSITED SILICON NITRIDES - COMBINED PLASMA-ASSISTED DEPOSITION AND RAPID THERMAL ANNEALING FOR THE FORMATION OF DEVICE-QUALITY NITRIDE LAYERS FOR APPLICATIONS IN MULTILAYER DIELECTRICS [J].