Observation of coreless edge and mixed dislocations in Mg-doped Al0.03Ga0.97N

被引:22
作者
Cherns, D
Wang, YQ
Liu, R
Ponce, FA
机构
[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
[2] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
关键词
D O I
10.1063/1.1527978
中图分类号
O59 [应用物理学];
学科分类号
摘要
Transmission electron microscopy has been used to examine the core structure of threading dislocations in heavily Mg-doped Al0.03Ga0.97N thin films. It is shown that edge and mixed, but not screw, dislocations have hollow cores with diameters typically 1-5 nm. A model is presented where hollow core formation is initiated by the segregation and subsequent precipitation of Mg at these dislocation cores. The implications for understanding the formation of hollow core dislocations in other GaN films are discussed. (C) 2002 American Institute of Physics.
引用
收藏
页码:4541 / 4543
页数:3
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