Plasma-enhanced chemical vapor deposition of fluorocarbon films with high thermal resistance and low dielectric constants

被引：50

作者：

Takeishi, S ^{[1
]}

Kudo, H ^{[1
]}

Shinohara, R ^{[1
]}

Hoshino, M ^{[1
]}

Fukuyama, S ^{[1
]}

Yamaguchi, J ^{[1
]}

Yamada, M ^{[1
]}

机构：

[1] FUJITSU LABS LTD,INORGAN MAT & POLYMERS LAB,ATSUGI,KANAGAWA 24301,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 05期

关键词：

D O I：

10.1149/1.1837682

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Fluorocarbon films with low dielectric constants and high thermal resistance have been developed by plasma-enhanced chemical vapor deposition (PECVD) using gas mixtures of fluorocarbons (e.g., C4F8), hydrocarbons (e.g., C2H2), and/or hydrogen. A conventional parallel plate electrode PECVD system was used as the reactor. We report dielectric constants lower than 2.4 with these fluorinated films. The thermal of composition temperature was higher than 400 degrees C and the glass transition temperature (Tg) was also higher than 450 degrees C. This enables the use of organic films with very low dielectric constant in actual devices.

引用

页码：1797 / 1802

页数：6

共 41 条

[1] DIELECTRIC LOSS DETERMINATION USING PERTURBATION [J].

ANDRAWIS, MY ;

DAVIS, WA ;

RIAD, SM ;

ELSHABINIRIAD, A .

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1992, 41 (06) :1032-1035

[2]

BLANCHET GB, 1993, APPL PHYS LETT, V62, P478

[3] MECHANISMS OF ETCHING AND POLYMERIZATION IN RADIOFREQUENCY DISCHARGES OF CF4-H2,CF4-C2F4,C2F6-H2,C3F8-H2 [J].

DAGOSTINO, R ;

CRAMAROSSA, F ;

COLAPRICO, V ;

DETTOLE, R .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1284-1288

[4] MECHANISMS OF DEPOSITION AND ETCHING OF THIN-FILMS OF PLASMA-POLYMERIZED FLUORINATED MONOMERS IN RADIOFREQUENCY DISCHARGES FED WITH C2F6-H2 AND C2F6-O2 MIXTURES [J].

DAGOSTINO, R ;

CRAMAROSSA, F ;

ILLUZZI, F .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :2754-2762

[5] MODIFICATION OF POLYTETRAFLUOROETHYLENE AND POLYETHYLENE SURFACES DOWNSTREAM FROM HELIUM MICROWAVE PLASMAS [J].

EGITTO, FD ;

MATIENZO, LJ .

POLYMER DEGRADATION AND STABILITY, 1990, 30 (03) :293-308

[6]

Endo K, 1996, APPL PHYS LETT, V68, P2864, DOI 10.1063/1.116350

[7] OPTICAL-EMISSION ACTINOMETRY AND SPECTRAL-LINE SHAPES IN RF GLOW-DISCHARGES [J].

GOTTSCHO, RA ;

DONNELLY, VM .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :245-250

[8] RADICAL KINETICS IN A FLUOROCARBON ETCHING PLASMA [J].

HIKOSAKA, Y ;

SUGAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (6B) :3040-3044

[9]

HIKOSAKA Y, 1993, JPN J APPL PHYS PT 2, V32, P690

[10] THERMAL-DESORPTION AND INFRARED STUDIES OF PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SIO FILMS WITH TETRAETHYLORTHOSILICATE [J].

HIRASHITA, N ;

TOKITOH, S ;

UCHIDA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (04) :1787-1793

← 1 2 3 4 5 →