Depth-resolved optical studies of excitonic and phonon-assisted transitions in ZnO epilayers

被引：25

作者：

Cho, Yong-Hoon ^{[1
]}

Kim, Ji-Young

Kwack, Ho-Sang

Kwon, Bong-Joon

Dang, Le Si

Ko, Hang-Ju

Yao, Takafumi

机构：

[1] Chungbuk Natl Univ, Natl Res Lab Nano Bio Photon, Phys Program BK21, Chonju 361763, South Korea

[2] Chungbuk Natl Univ, Dept Phys, Chonju 361763, South Korea

[3] Chungbuk Natl Univ, Inst Basic Sci Res, Chonju 361763, South Korea

[4] Univ Grenoble 1, Spectrometrie Phys Lab, CNRS, UMR 5588, F-38402 St Martin Dheres, France

[5] Korea Photon Technol Inst, Kwangju 500460, South Korea

[6] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 20期

关键词：

D O I：

10.1063/1.2388252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report depth-resolved optical properties of excitonic and phonon-assisted transitions in ZnO epilayers by photoluminescence (PL) and cathodoluminescence. A weaker free exciton (FX) emission than its first longitudinal optical phonon replica (FX-1LO) is observed at elevated temperatures (T > 150 K) for interior area, while a stronger FX than FX-1LO is seen at all temperatures for top surface area of the sample. The authors exclude out a possible self-absorption process by PL excited at back surface of the sample. Therefore, the authors conclude that the different intensity ratios of FX and FX-1LO depending on the sample depth are strongly associated with extrinsic features of ZnO. (c) 2006 American Institute of Physics.

引用

页数：3

共 13 条

[1] Stimulated emission and optical gain in ZnO epilayers grown by plasma-assisted molecular-beam epitaxy with buffers [J].