Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N quantum wells by isoelectronic In-doping during metalorganic vapor phase epitaxy

被引：14

作者：

Kariya, M

Nitta, S

Kosaki, M

Yukawa, Y

Yamaguchi, S

Amano, H

Akasaki, I

机构：

[1] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[2] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2000年 / 39卷 / 2B期

关键词：

GaN; AlGaN; quantum wells; isoelectronic In-doping; carrier gas; X-ray diffraction; photoluminescence;

D O I：

10.1143/JJAP.39.L143

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of isoelectronic In-doping on the structural and optical properties of GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N quantum wells (QWs) on GaN were investigated. QWs were grown by atmospheric pressure metalorganic vapor phase epitaxy with either H-2 or N-2 carrier gas. Without In-doping, QWs grown in N-2 carrier gas had highly superior crystalline and optical properties than those grown in H-2 carrier gas. X-ray diffraction and photoluminescence studies revealed that In-doping improves the crystalline and optical properties of QWs, irrespective of the carrier gas species used during growth. These improvements are more remarkable for In-doping into the well layers rather than into the barrier layers.

引用

页码：L143 / L145

页数：3

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