Characterization of ZnSe/Ge material growth using the atomic force microscope

被引：4

作者：

Abdel-Motaleb, IM ^{[1
]}

Pal, S ^{[1
]}

Desai, P ^{[1
]}

机构：

[1] No Illinois Univ, Dept Elect Engn, De Kalb, IL 60115 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 217卷 / 04期

关键词：

ZnSe/Ge; MOCVD growth; zinc selenide growth;

D O I：

10.1016/S0022-0248(00)00484-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnSe has been grown on (100)p-Ge substrates using atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD). The quality of the grown materials has been investigated using the atomic force microscope (AFM). This study has shown that high-quality ZnSe materials can be deposited on p-Ge wafers if pre-growth surface treatment is performed. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

引用

页码：366 / 370

页数：5

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