CHARACTERIZATION OF GAAS-O-GE AND ZNSE-O-GE HETEROINTERFACES GROWN ON OXYGEN-EXPOSED GAAS AND ZNSE SUBSTRATES

被引:3
作者
JAIN, FC [1 ]
机构
[1] UNIV CONNECTICUT,INST MAT SCI,STORRS,CT 06268
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期
关键词
D O I
10.1116/1.582573
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:661 / 667
页数:7
相关论文
共 25 条
[1]   INELASTIC LIGHT-SCATTERING FROM A QUASI-2-DIMENSIONAL ELECTRON-SYSTEM IN GAAS-ALXGA1-XAS HETEROJUNCTIONS [J].
ABSTREITER, G ;
PLOOG, K .
PHYSICAL REVIEW LETTERS, 1979, 42 (19) :1308-1311
[3]   GE-GAAS(110) INTERFACE FORMATION [J].
BAUER, RS ;
MCMENAMIN, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1444-1449
[4]   EPITAXIAL GROWTH OF MIRROR SMOOTH GE ON GAAS AND GE BY LOW TEMPERATURE GEL2 DISPROPORTIONATION REACTION [J].
BERKENBL.M ;
REISMAN, A ;
LIGHT, TB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) :966-&
[5]   CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].
BRILLSON, LJ ;
BACHRACH, RZ ;
BAUER, RS ;
MCMENAMIN, J .
PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401
[6]   OXYGEN SORPTION AND EXCITONIC EFFECTS ON GAAS SURFACES [J].
CHYE, PW ;
PIANETTA, P ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :917-919
[7]  
DUNLAP WC, 1958, B AM PHYS SOC 2, V1, P294
[8]   PREDICTION OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES FROM BULK BAND STRUCTURES [J].
FRENSLEY, WR ;
KROEMER, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :810-815
[9]   XPS MEASUREMENTS OF ABRUPT GE-GAAS HETEROJUNCTION INTERFACES [J].
GRANT, RW ;
WALDROP, JR ;
KRAUT, EA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1451-1455
[10]   SWITCHING AND MEMORY CHARACTERISTICS OF ZNSE-GE HETEROJUNCTIONS [J].
HOVEL, HJ ;
URGELL, JJ .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :5076-&