共 25 条
[3]
GE-GAAS(110) INTERFACE FORMATION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1978, 15 (04)
:1444-1449
[6]
OXYGEN SORPTION AND EXCITONIC EFFECTS ON GAAS SURFACES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1977, 14 (04)
:917-919
[7]
DUNLAP WC, 1958, B AM PHYS SOC 2, V1, P294
[8]
PREDICTION OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES FROM BULK BAND STRUCTURES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1976, 13 (04)
:810-815
[9]
XPS MEASUREMENTS OF ABRUPT GE-GAAS HETEROJUNCTION INTERFACES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1978, 15 (04)
:1451-1455