Understanding SRAM high-temperature-operating-life NBTI: Statistics and permanent vs recoverable damage

被引：45

作者：

Haggag, A. ^{[1
]}

Anderson, G. ^{[1
]}

Parihar, S. ^{[1
]}

Burnett, D. ^{[1
]}

Abeln, G. ^{[1
]}

Higman, J. ^{[1
]}

Moosa, M. ^{[1
]}

机构：

[1] Freescale Semicond Inc, 3501 Ed Bluestein Blvd,MD K-10, Austin, TX 78721 USA

来源：

2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL | 2007年

关键词：

D O I：

10.1109/RELPHY.2007.369932

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We show, using deconvolution, SRAM V-min shift statistics yield a spread that follows Poisson area scaling and a time- and voltage-dependence of t(1/6) and V-3, respectively. This is demonstrated to be consistent with permanent NBTI shift (Si-H bond breaking) relevant for end-of-life extrapolation. In contrast recoverable NBTI shift (hole trapping/detrapping) is shown to be only a function of stress duty and can be very small for realistic product duties.

引用

页码：452 / +

页数：3

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