共 16 条
Mesa-size dependence characteristics of vertical surface-emitting lasers
被引:3
作者:

Das, NC
论文数: 0 引用数: 0
h-index: 0
机构:
USA, Res Lab, EM, SE,AMSRL, Adelphi, MD 20783 USA USA, Res Lab, EM, SE,AMSRL, Adelphi, MD 20783 USA

Chang, W
论文数: 0 引用数: 0
h-index: 0
机构:
USA, Res Lab, EM, SE,AMSRL, Adelphi, MD 20783 USA USA, Res Lab, EM, SE,AMSRL, Adelphi, MD 20783 USA
机构:
[1] USA, Res Lab, EM, SE,AMSRL, Adelphi, MD 20783 USA
关键词:
VCSEL;
oxidation;
surface-emitting laser;
D O I:
10.1007/s11664-004-0024-y
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
The vertical-cavity surface-emitting laser (VCSEL) is the most suitable light source for many optoelectronic applications because of its planar nature. The design of large VCSEL arrays requires accurate modeling of device characteristics. In this paper, we present a thermal model to analyze the dependence of VCSEL threshold current and light-output characteristics on aperture size. For both 850-nm and 980-nm VCSELs, a linear dependence of threshold current on device area is observed for oxidized aperture sizes with diameters between 5 mum and 25 mum. Good agreement between theoretical and experimental light-output characteristics is observed using a simple thermal model.
引用
收藏
页码:972 / 976
页数:5
相关论文
共 16 条
[1]
A scalar variational method for resonant modes of oxide-apertured vertical-cavity surface-emitting lasers
[J].
Chang, KY
;
Woodhead, J
;
Roberts, J
;
Robson, PN
.
JOURNAL OF APPLIED PHYSICS,
2000, 87 (01)
:10-21

Chang, KY
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

Woodhead, J
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

Roberts, J
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

Robson, PN
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
[2]
Vertical-cavity surface emitting lasers: Moving from research to manufacturing
[J].
Choquette, KD
;
Hou, HQ
.
PROCEEDINGS OF THE IEEE,
1997, 85 (11)
:1730-1739

Choquette, KD
论文数: 0 引用数: 0
h-index: 0
机构: Center for Compound Semiconductor Science and Technology, Sandia National Laboratories, Albuquerque

Hou, HQ
论文数: 0 引用数: 0
h-index: 0
机构: Center for Compound Semiconductor Science and Technology, Sandia National Laboratories, Albuquerque
[3]
Scalability of small-aperture selectively oxidized vertical cavity lasers
[J].
Choquette, KD
;
Chow, WW
;
Hadley, GR
;
Hou, HQ
;
Geib, KM
.
APPLIED PHYSICS LETTERS,
1997, 70 (07)
:823-825

Choquette, KD
论文数: 0 引用数: 0
h-index: 0
机构: Ctr. Compd. Semiconduct. Technol., Sandia National Laboratories, Albuquerque

Chow, WW
论文数: 0 引用数: 0
h-index: 0
机构: Ctr. Compd. Semiconduct. Technol., Sandia National Laboratories, Albuquerque

Hadley, GR
论文数: 0 引用数: 0
h-index: 0
机构: Ctr. Compd. Semiconduct. Technol., Sandia National Laboratories, Albuquerque

Hou, HQ
论文数: 0 引用数: 0
h-index: 0
机构: Ctr. Compd. Semiconduct. Technol., Sandia National Laboratories, Albuquerque

Geib, KM
论文数: 0 引用数: 0
h-index: 0
机构: Ctr. Compd. Semiconduct. Technol., Sandia National Laboratories, Albuquerque
[4]
Lateral oxidation kinetics of AlxGa1-xAs layer by capacitance technique
[J].
Das, NC
;
Gollsneider, B
;
Newman, P
;
Chang, W
.
APPLIED PHYSICS LETTERS,
2002, 81 (09)
:1600-1602

Das, NC
论文数: 0 引用数: 0
h-index: 0
机构:
Army Res Lab, AMSRLSEEM, Adelphi, MD 20783 USA Army Res Lab, AMSRLSEEM, Adelphi, MD 20783 USA

Gollsneider, B
论文数: 0 引用数: 0
h-index: 0
机构:
Army Res Lab, AMSRLSEEM, Adelphi, MD 20783 USA Army Res Lab, AMSRLSEEM, Adelphi, MD 20783 USA

Newman, P
论文数: 0 引用数: 0
h-index: 0
机构:
Army Res Lab, AMSRLSEEM, Adelphi, MD 20783 USA Army Res Lab, AMSRLSEEM, Adelphi, MD 20783 USA

Chang, W
论文数: 0 引用数: 0
h-index: 0
机构:
Army Res Lab, AMSRLSEEM, Adelphi, MD 20783 USA Army Res Lab, AMSRLSEEM, Adelphi, MD 20783 USA
[5]
Monolithic 2D-VCSEL array with >2W CW and >5W pulsed output power
[J].
Francis, D
;
Chen, HL
;
Yuen, W
;
Li, G
;
Chang-Hasnain, C
.
ELECTRONICS LETTERS,
1998, 34 (22)
:2132-2133

Francis, D
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Berkeley, Berkeley, CA 94720 USA Univ Calif Berkeley, Berkeley, CA 94720 USA

Chen, HL
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Berkeley, CA 94720 USA

Yuen, W
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Berkeley, CA 94720 USA

Li, G
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Berkeley, CA 94720 USA

Chang-Hasnain, C
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Berkeley, CA 94720 USA
[6]
MICROCAVITY GAALAS/GAAS SURFACE-EMITTING LASER WITH ITH=6MA
[J].
IGA, K
;
KINOSHITA, S
;
KOYAMA, F
.
ELECTRONICS LETTERS,
1987, 23 (03)
:134-136

IGA, K
论文数: 0 引用数: 0
h-index: 0
机构: Tokyo Inst of Technology, Yokohama, Jpn, Tokyo Inst of Technology, Yokohama, Jpn

论文数: 引用数:
h-index:
机构:

论文数: 引用数:
h-index:
机构:
[7]
Low-threshold 840-nm laterally oxidized vertical-cavity lasers using AlInGaAs-AlGaAs strained active layers
[J].
Ko, J
;
Hegblom, ER
;
Akulova, Y
;
Thibeault, BJ
;
Coldren, LA
.
IEEE PHOTONICS TECHNOLOGY LETTERS,
1997, 9 (07)
:863-865

Ko, J
论文数: 0 引用数: 0
h-index: 0
机构: Dept. of Elec. and Comp. Engineering, University of California, Santa Barbara

Hegblom, ER
论文数: 0 引用数: 0
h-index: 0
机构: Dept. of Elec. and Comp. Engineering, University of California, Santa Barbara

Akulova, Y
论文数: 0 引用数: 0
h-index: 0
机构: Dept. of Elec. and Comp. Engineering, University of California, Santa Barbara

Thibeault, BJ
论文数: 0 引用数: 0
h-index: 0
机构: Dept. of Elec. and Comp. Engineering, University of California, Santa Barbara

论文数: 引用数:
h-index:
机构:
[8]
Multilayer analysis of anisotropic heat flux in vertical cavity-surface emitting lasers with quarter-wave semiconducting mirrors
[J].
Leal, AA
;
Osinski, M
;
Conforti, E
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1998, 46 (03)
:208-214

Leal, AA
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Estadual Campinas, Fac Elect & Comp Engn, DMO,FEEC, UNICAMP, BR-13083970 Campinas, SP, Brazil Univ Estadual Campinas, Fac Elect & Comp Engn, DMO,FEEC, UNICAMP, BR-13083970 Campinas, SP, Brazil

Osinski, M
论文数: 0 引用数: 0
h-index: 0
机构: Univ Estadual Campinas, Fac Elect & Comp Engn, DMO,FEEC, UNICAMP, BR-13083970 Campinas, SP, Brazil

Conforti, E
论文数: 0 引用数: 0
h-index: 0
机构: Univ Estadual Campinas, Fac Elect & Comp Engn, DMO,FEEC, UNICAMP, BR-13083970 Campinas, SP, Brazil
[9]
Index guiding dependent effects in implant and oxide confined vertical-cavity lasers
[J].
Lear, KL
;
Schneider, RP
;
Choquette, KD
;
Kilcoyne, SP
.
IEEE PHOTONICS TECHNOLOGY LETTERS,
1996, 8 (06)
:740-742

Lear, KL
论文数: 0 引用数: 0
h-index: 0
机构: Sandia National Laboratories, Photonics Research Department 1312, MS 0603, Albuquerque, NM 87185

Schneider, RP
论文数: 0 引用数: 0
h-index: 0
机构: Sandia National Laboratories, Photonics Research Department 1312, MS 0603, Albuquerque, NM 87185

Choquette, KD
论文数: 0 引用数: 0
h-index: 0
机构: Sandia National Laboratories, Photonics Research Department 1312, MS 0603, Albuquerque, NM 87185

Kilcoyne, SP
论文数: 0 引用数: 0
h-index: 0
机构: Sandia National Laboratories, Photonics Research Department 1312, MS 0603, Albuquerque, NM 87185
[10]
CHARACTERISTICS OF TOP-SURFACE-EMITTING GAAS QUANTUM-WELL LASERS
[J].
LEE, YH
;
TELL, B
;
BROWNGOEBELER, K
;
JEWELL, JL
;
BURRUS, CA
;
HOVE, JMV
.
IEEE PHOTONICS TECHNOLOGY LETTERS,
1990, 2 (09)
:686-688

LEE, YH
论文数: 0 引用数: 0
h-index: 0
机构:
APA OPT INC,BLAINE,MN 55434 APA OPT INC,BLAINE,MN 55434

TELL, B
论文数: 0 引用数: 0
h-index: 0
机构:
APA OPT INC,BLAINE,MN 55434 APA OPT INC,BLAINE,MN 55434

BROWNGOEBELER, K
论文数: 0 引用数: 0
h-index: 0
机构:
APA OPT INC,BLAINE,MN 55434 APA OPT INC,BLAINE,MN 55434

JEWELL, JL
论文数: 0 引用数: 0
h-index: 0
机构:
APA OPT INC,BLAINE,MN 55434 APA OPT INC,BLAINE,MN 55434

BURRUS, CA
论文数: 0 引用数: 0
h-index: 0
机构:
APA OPT INC,BLAINE,MN 55434 APA OPT INC,BLAINE,MN 55434

HOVE, JMV
论文数: 0 引用数: 0
h-index: 0
机构:
APA OPT INC,BLAINE,MN 55434 APA OPT INC,BLAINE,MN 55434