Mesa-size dependence characteristics of vertical surface-emitting lasers

被引:3
作者
Das, NC [1 ]
Chang, W [1 ]
机构
[1] USA, Res Lab, EM, SE,AMSRL, Adelphi, MD 20783 USA
关键词
VCSEL; oxidation; surface-emitting laser;
D O I
10.1007/s11664-004-0024-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The vertical-cavity surface-emitting laser (VCSEL) is the most suitable light source for many optoelectronic applications because of its planar nature. The design of large VCSEL arrays requires accurate modeling of device characteristics. In this paper, we present a thermal model to analyze the dependence of VCSEL threshold current and light-output characteristics on aperture size. For both 850-nm and 980-nm VCSELs, a linear dependence of threshold current on device area is observed for oxidized aperture sizes with diameters between 5 mum and 25 mum. Good agreement between theoretical and experimental light-output characteristics is observed using a simple thermal model.
引用
收藏
页码:972 / 976
页数:5
相关论文
共 16 条
[1]   A scalar variational method for resonant modes of oxide-apertured vertical-cavity surface-emitting lasers [J].
Chang, KY ;
Woodhead, J ;
Roberts, J ;
Robson, PN .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :10-21
[2]   Vertical-cavity surface emitting lasers: Moving from research to manufacturing [J].
Choquette, KD ;
Hou, HQ .
PROCEEDINGS OF THE IEEE, 1997, 85 (11) :1730-1739
[3]   Scalability of small-aperture selectively oxidized vertical cavity lasers [J].
Choquette, KD ;
Chow, WW ;
Hadley, GR ;
Hou, HQ ;
Geib, KM .
APPLIED PHYSICS LETTERS, 1997, 70 (07) :823-825
[4]   Lateral oxidation kinetics of AlxGa1-xAs layer by capacitance technique [J].
Das, NC ;
Gollsneider, B ;
Newman, P ;
Chang, W .
APPLIED PHYSICS LETTERS, 2002, 81 (09) :1600-1602
[5]   Monolithic 2D-VCSEL array with >2W CW and >5W pulsed output power [J].
Francis, D ;
Chen, HL ;
Yuen, W ;
Li, G ;
Chang-Hasnain, C .
ELECTRONICS LETTERS, 1998, 34 (22) :2132-2133
[6]   MICROCAVITY GAALAS/GAAS SURFACE-EMITTING LASER WITH ITH=6MA [J].
IGA, K ;
KINOSHITA, S ;
KOYAMA, F .
ELECTRONICS LETTERS, 1987, 23 (03) :134-136
[7]   Low-threshold 840-nm laterally oxidized vertical-cavity lasers using AlInGaAs-AlGaAs strained active layers [J].
Ko, J ;
Hegblom, ER ;
Akulova, Y ;
Thibeault, BJ ;
Coldren, LA .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (07) :863-865
[8]   Multilayer analysis of anisotropic heat flux in vertical cavity-surface emitting lasers with quarter-wave semiconducting mirrors [J].
Leal, AA ;
Osinski, M ;
Conforti, E .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (03) :208-214
[9]   Index guiding dependent effects in implant and oxide confined vertical-cavity lasers [J].
Lear, KL ;
Schneider, RP ;
Choquette, KD ;
Kilcoyne, SP .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (06) :740-742
[10]   CHARACTERISTICS OF TOP-SURFACE-EMITTING GAAS QUANTUM-WELL LASERS [J].
LEE, YH ;
TELL, B ;
BROWNGOEBELER, K ;
JEWELL, JL ;
BURRUS, CA ;
HOVE, JMV .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (09) :686-688