Lateral oxidation kinetics of AlxGa1-xAs layer by capacitance technique

被引：5

作者：

Das, NC ^{[1
]}

Gollsneider, B ^{[1
]}

Newman, P ^{[1
]}

Chang, W ^{[1
]}

机构：

[1] Army Res Lab, AMSRLSEEM, Adelphi, MD 20783 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 09期

关键词：

D O I：

10.1063/1.1502011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Capacitance voltage (C-V) technique is used to determine the kinetics of lateral oxidation of AlxGa1-xAs layer in a circular mesa structure. The oxide layer width determined by the C-V technique agrees with optical measurements. Additionally, the C-V technique has the advantage of determining different types of defects in the oxide, which are important for projecting the reliability of vertical cavity surface emitting laser devices. The wet oxidation between 400 and 435 degreesC shows negative charges in the oxide.

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页码：1600 / 1602

页数：3

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