Dependence of lateral oxidation rate on thickness of AlAs layer of interest as a current aperture in vertical-cavity surface-emitting laser structures

被引：26

作者：

Koley, B ^{[1
]}

Dagenais, M

Jin, R

Simonis, G

Pham, J

McLane, G

Johnson, F

Whaley, R

机构：

[1] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

[3] USA, Res Lab, Ft Monmouth, NJ 07703 USA

[4] Lab Phys Sci, College Pk, MD 20742 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 01期

关键词：

D O I：

10.1063/1.368094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependence of the wet oxidation process on the AlAs layer thickness used in selectively oxidized vertical-cavity surface-emitting-laser structures is studied in detail. A theoretical model based on a diffusion-reaction process is proposed. A rapid reduction in the oxidation rate is predicted with a reduction in the layer thickness of the ultrathin AlAs layer. The theoretical predictions are verified through experiments. (C) 1998 American Institute of Physics.

引用

页码：600 / 605

页数：6

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