Structural and electrical properties of Pb(Zr,Ti)O3 thin films on NiCr substrate modified by LaNiO3 and PbTiO3 buffer layers

Ferroelectric Pb(Zr,Ti)O-3 (PZT) thin films were deposited onto the NiCr (NC) substrate by using sol-gel techniques. LaNiO3 (LNO) and PbTiO3 (PT) buffer layers have been introduced to grow single-phase perovskite PZT thin films at the lower temperature of 550 degreesC. The (110) preferred orientation of PZT thin films was favored using LNO and PT buffer layers. Dielectric constant and remnant polarization of PZT thin films on NC with a LNO buffer layer achieved similar to 430 and 13 muC/cm(2) respectively. The ferroelectric P-E loops of PZT thin films were shifted towards the positive field by introducing LNO buffer layers. In addition, the coercive field and internal bias field increased with increasing the thickness of LNO layer.