Experimental determination of band offsets at the SnS/CdS and SnS/InSxOy heterojunctions

被引：39

作者：

Haleem, A. M. Abdel ^{[1
]}

Ichimura, M. ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 03期

关键词：

cadmium compounds; II-VI semiconductors; indium compounds; IV-VI semiconductors; semiconductor heterojunctions; tin compounds; valence bands; wide band gap semiconductors; X-ray photoelectron spectra; SNS THIN-FILMS; PHOTOVOLTAIC CELLS; SOLAR-CELLS; ELECTROCHEMICAL DEPOSITION; CHEMICAL-DEPOSITION; INTERFACE; ALIGNMENT; SEMICONDUCTORS; DISCONTINUITIES; PRESSURE;

D O I：

10.1063/1.3294619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The semidirect x-ray photoelectron spectroscopy technique was used to measure the band alignments at the interface of heterostructures based on SnS. The layers were deposited by electrochemical deposition (ECD), chemical bath deposition (CBD), or photochemical deposition (PCD). The following four kinds of heterojunctions were characterized. (1) ECD-SnS/PCD-CdS. (2) CBD-SnS/PCD-CdS. (3) ECD-SnS/ECD-InSxOy. (4) CBD-SnS/ECD-InSxOy. The valence band offsets Delta E-V of those four heterojunctions are determined to be 1.34, 1.59, 0.77, and 0.74 +/- 0.3 eV, respectively.

引用

页数：5

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