Low temperature analysis of 0.25 μm T-gate strained Si/Si0.55Ge0.45 N-MODFET's

被引：33

作者：

Aniel, F ^{[1
]}

Zerounian, N

Adde, R

Zeuner, M

Hackbarth, T

König, U

机构：

[1] Univ Paris 11, IEF, CNRS, UMR 8622, F-91405 Orsay, France

[2] Daimler Chrysler Res Ctr, D-89081 Ulm, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 07期

关键词：

low temperature; microwave devices; modeling; noise; SiGe n-MODFET; silicon compounds;

D O I：

10.1109/16.848296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low temperature de and HF investigation of 0.25 mu m T-gate Si/Si0.55Ge0.45 n-MODFET's is presented. Outstanding maximum oscillation frequencies f(max) range from 100-120 GHz at 300 K up to 195 GHz at 50 K. These high-frequency characteristics are the first reported at low temperature on Si/SiGe n-MODFET's and are also the highest room temperature data reported so far. Physical modeling is used to explain the main trends observed when cooling down the n-MODFET. Many experimental data are presented, The dependence on temperature and biases of the important small-signal equivalent circuit parameters is investigated to analyze the device high-frequency performances and the minimum noise figure of the intrinsic device is determined.

引用

页码：1477 / 1483

页数：7

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