Competitive adsorption effects in the metalorganic vapor phase epitaxy of GaN

被引：25

作者：

Briot, O

Clur, S

Aulombard, RL

机构：

[1] Grp. d'Etud. Semiconducteurs CNRS, CC074, Université Montpellier II, 34095 Montpellier Cedex 5, Place Eugene Bataillon

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 14期

关键词：

D O I：

10.1063/1.119764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth mechanisms of GaN grown on a GaN buffer deposited onto sapphire substrates are studied here. The growth rate was measured at different temperatures versus ammonia Row and was found to decrease with increasing NH3 flow. This surprising behavior is modeled in terms of competitive adsorption of species on the growing surface. Very good agreement is obtained between the model and the experimental data. (C) 1997 American Institute of Physics.

引用

页码：1990 / 1992

页数：3

共 10 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER
AMANO, H
SAWAKI, N
AKASAKI, I
TOYODA, Y
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 353 - 355
[2] A study of parasitic reactions between NH3 and TMGa or TMAI
Chen, CH
Liu, H
Steigerwald, D
Imler, W
Kuo, CP
Craford, MG
Ludowise, M
Lester, S
Amano, J
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (06) : 1004 - 1008
[3] Chen CH, 1996, MATER RES SOC SYMP P, V395, P103
[4] KAMP M, 1995, P TOP WORKSH NITR TW
[5] INSITU FTIR AND SURFACE-ANALYSIS OF THE REACTION OF TRIMETHYLGALLIUM AND AMMONIA
MAZZARESE, D
TRIPATHI, A
CONNER, WC
JONES, KA
CALDERON, L
ECKART, DW
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (03) : 369 - 377
[6] GAN GROWTH USING GAN BUFFER LAYER
NAKAMURA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A): : L1705 - L1707
[7] BASIC STUDIES OF GALLIUM NITRIDE GROWTH ON SAPPHIRE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AND OPTICAL-PROPERTIES OF DEPOSITED LAYERS
NIEBUHR, R
BACHEM, K
DOMBROWSKI, K
MAIER, M
PLETSCHEN, W
KAUFMANN, U
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) : 1531 - 1534
[8] Stringfellow G.B., 1989, ORGANOMETALLIC VAPOR
[9] COMPARISON OF HYDRIDE VAPOR-PHASE EPITAXY OF GAN LAYERS ON CUBIC GAN/(100)GAAS AND HEXAGONAL GAN/(111)GAAS SUBSTRATES
TSUCHIYA, H
HASEGAWA, F
OKUMURA, H
YOSHIDA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12A): : 6448 - 6453
[10] METALORGANIC SURFACE CHEMICAL ADSORPTION DEPOSITION OF AIN FILMS BY AMMONIA AND TRIMETHYLALUMINUM
YU, ZJ
EDGAR, JH
AHMED, AU
RYS, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (01) : 196 - 199

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