Transport properties of highly conductive n-type Al-rich AlxGa1-xN (x≥0.7)

被引：119

作者：

Nakarmi, ML ^{[1
]}

Kim, KH ^{[1
]}

Zhu, K ^{[1
]}

Lin, JY ^{[1
]}

Jiang, HX ^{[1
]}

机构：

[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 17期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1809272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report here the growth and transport studies of conductive n-type AlxGa1-xN alloys with high Al contents (xgreater than or equal to0.7). Si-doped AlxGa1-xN alloys were grown by metalorganic chemical vapor deposition on AlN-epilayer/sapphire substrates with very smooth surface. Low n-type resistivities have been obtained for Al-rich AlxGa1-xN alloys. The resistivity was observed to increase rapidly with increasing x due to the deepening of the Si donor energy level. Transport measurements have indicated that we have achieved n-type conduction in pure AlN. From the temperature dependence of the resistivity, the donor activation energy was estimated to vary from 23 to 180 meV as x was increased from 0.7 to 1.0. (C) 2004 American Institute of Physics.

引用

页码：3769 / 3771

页数：3

共 20 条

[1] Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates [J].

Arulkumaran, S ;

Sakai, M ;

Egawa, T ;

Ishikawa, H ;

Jimbo, T ;

Shibata, T ;

Asai, K ;

Sumiya, S ;

Kuraoka, Y ;

Tanaka, M ;

Oda, O .

APPLIED PHYSICS LETTERS, 2002, 81 (06) :1131-1133

[2] The promise and challenge of solid-state lighting [J].

Bergh, A ;

Craford, G ;

Duggal, A ;

Haitz, R .

PHYSICS TODAY, 2001, 54 (12) :42-47

[3] Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films [J].

Cantu, P ;

Keller, S ;

Mishra, UK ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2003, 82 (21) :3683-3685

[4] Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes [J].

Chitnis, A ;

Zhang, JP ;

Adivarahan, V ;

Shatalov, M ;

Wu, S ;

Pachipulusu, R ;

Mandavilli, V ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2003, 82 (16) :2565-2567

[5]

Jahnen B, 1998, MRS INTERNET J N S R, V3, part. no.

[6] III-nitride ultraviolet light-emitting diodes with delta doping [J].

Kim, KH ;

Li, J ;

Jin, SX ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2003, 83 (03) :566-568

[7]

Lakowicz J.R., 2004, PRINCIPLES FLUORESCE, V3rd

[8] Optical and electrical properties of Al-rich AlGaN alloys [J].

Li, J ;

Nam, KB ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2001, 79 (20) :3245-3247

[9] Point-defect complexes and broadband luminescence in GaN and AlN [J].

Mattila, T ;

Nieminen, RM .

PHYSICAL REVIEW B, 1997, 55 (15) :9571-9576

[10] Photoluminescence studies of Si-doped AlN epilayers [J].

Nam, KB ;

Nakarmi, ML ;

Li, J ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2003, 83 (14) :2787-2789

← 1 2 →