Low-voltage pentacene thin-film transistor with a polymer/YOx/polymer triple-layer dielectric on a plastic substrate

被引:12
作者
Hwang, D. K. [1 ]
Choi, Jeong-M.
Park, Ji Hoon
Kim, Jae Hoon
Kim, Eugene
Im, Seongil
机构
[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
[2] Hongik Univ, Dept Informat & Display, Seoul 121791, South Korea
关键词
D O I
10.1149/1.2432939
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We report on the fabrication of pentacene thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP)/yttrium oxide (YOx)/PVP triple-layer dielectric deposited on an indium-tin oxide (ITO)/plastic substrate. Our PVP/YOx/PVP triple layer exhibited 2 orders of magnitude lower gate current leakage than that of a PVP/YOx double layer because the former has a PVP buffer to cope with the irregular surfaces of the ITO/plastic substrate. Adopting the triple-layer dielectric, our pentacene TFTs with NiOx and Au source/drain electrodes exhibited high field mobilities of similar to 1.37 and 0.84 cm(2)/V s, respectively, under low driving voltage conditions (less than -8 V). We conclude that our triple-layer approach is quite a promising and practical way to realize a flexible low-voltage high-performance organic TFT on ITO/plastic substrates with rough surfaces. (c) 2007 The Electrochemical Society.
引用
收藏
页码:H117 / H119
页数:3
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