Flexible Low-Voltage Organic Transistors and Circuits Based on a High-Mobility Organic Semiconductor with Good Air Stability

被引：221

作者：

Zschieschang, Ute ^{[1
]}

Ante, Frederik ^{[1
]}

Yamamoto, Tatsuya ^{[2
]}

Takimiya, Kazuo ^{[2
]}

Kuwabara, Hirokazu ^{[3
]}

Ikeda, Masaaki ^{[3
]}

Sekitani, Tsuyoshi ^{[4
]}

Someya, Takao ^{[4
]}

Kern, Klaus ^{[1
,5
]}

Klauk, Hagen ^{[1
]}

机构：

[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

[2] Hiroshima Univ, Grad Sch Engn, Inst Adv Mat Res, Dept Appl Chem, Higashihiroshima 724, Japan

[3] Nippon Kayaku Co Ltd, Funct Chem R&D Labs, Kita Ku, Tokyo 115, Japan

[4] Univ Tokyo, Dept Elect Engn, Tokyo 113, Japan

[5] Ecole Polytech Fed Lausanne, Inst Phys Mat Condensee, CH-1015 Lausanne, Switzerland

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 09期

关键词：

THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; PHENYLENE OLIGOMERS; CRYSTAL-STRUCTURE; PENTACENE; DERIVATIVES; SUBSTRATE; OXIDATION;

D O I：

10.1002/adma.200902740

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Flexible transistors and circuits based on dinaphtho-[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), a conjugated semiconductor with a large ionization potential (5.4 eV), are reported. The transistors have a mobility of 0.6 cm(2) V(-1) s(-1) and the ring oscillators have a stage delay of 18 mu s. Due to the excellent stability of the semiconductor, the devices and circuits maintain 50% of their initial performance for a period of 8 months in ambient air.

引用

页码：982 / +

页数：5

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