Photoemission study of the iron-induced chemical reduction of silicon native oxide

被引：14

作者：

Garnier, MG ^{[1
]}

de los Arcos, T ^{[1
]}

Boudaden, J ^{[1
]}

Oelhafen, P ^{[1
]}

机构：

[1] Univ Basel, Inst Phys, CH-4056 Basel, Switzerland

来源：

SURFACE SCIENCE | 2003年 / 536卷 / 1-3期

关键词：

metal-oxide-semiconductor (MOS) structures; iron; silicon; silicon oxides; evaporation and sublimation; photoelectron spectroscopy;

D O I：

10.1016/S0039-6028(03)00581-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Samples consisting of Fe deposited onto a Si wafer covered with its native oxide layer have been studied by photoelectron spectroscopy for different Fe coverages and different deposition techniques involving different kinetic energies for the deposited Fe atoms. We find that the Fe atoms are buried into the substrate even for low kinetic energy techniques, and that a reduction of the Si oxide concomitant with an oxidation of the Fe occurs. This reaction can be assisted by increasing the kinetic energy of the Fe atoms. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：130 / 138

页数：9

共 28 条

[1] Synthesis of SiC on Si(111) at moderate temperatures by supersonic C60 beams [J].