Photoluminescence studies in sol-gel derived Zno films

被引：51

作者：

Kumar, Neeru

Kaur, Ravinder

Mehra, R. M.

机构：

[1] Univ Delhi, Dept Elect Sci, New Delhi 110021, India

[2] Univ Delhi, Deen Dayal Upadhayay Coll, Dept Phys & Elect, New Delhi 110015, India

来源：

JOURNAL OF LUMINESCENCE | 2007年 / 126卷 / 02期

关键词：

photoluminescence; ZnO; sol-gel;

D O I：

10.1016/j.jlumin.2006.11.012

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The photoluminescence (PL) properties of high quality ZnO thin films grown on Si (10 0) substrates using spin coating technique are investigated as a function of temperature in the range 10-300 K. The PL spectra shows dominant donor bound excitonic emission along with free exciton related emission in the UV region. The corresponding activation energy of thermal quenching is found to be similar to 59.7 meV. The parameters that describe the temperature dependent red shift of the band-edge transition energy are evaluated using different models. The broadening of the PL peak due to increase in temperature is mainly attributed to the exciton-LO phonon coupling. (c) 2006 Elsevier B.V. All rights reserved.

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页码：784 / 788

页数：5

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