A Route to High-Quality Crystalline Coaxial Core/Multishell Ge@Si(GeSi)n and Si@(GeSi)n Nanowire Heterostructures

被引：40

作者：

Ben-Ishai, Moshit ^{[1
]}

Patolsky, Fernando ^{[1
]}

机构：

[1] Tel Aviv Univ, Raymond & Beverly Sackler Fac Exact Sci, Sch Chem, IL-69978 Tel Aviv, Israel

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 08期

基金：

以色列科学基金会;

关键词：

STRANSKI-KRASTANOW GROWTH; MISFIT DISLOCATION LOOPS; EPITAXIAL CORE-SHELL; GE; SI; MOBILITY; HOLE;

D O I：

10.1002/adma.200902815

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The layer-by-layer formation and characterization of conformally smooth, uniform, and single-crystalline Ge(core)/Si-Ge-Si(multishell) and Si(core)/Ge-Si(multishell) nanowire heterostructures is reported. The modulation of their radial composition is well-defined and there is precise control over a wide range of shell thicknesses regardless of the initial nanowire core diameter.

引用

页码：902 / +

页数：6

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