Molecular beam epitaxy and optical properties of ZnCdS/ZnMgS quantum wells on GaP

被引：10

作者：

Ichino, K ^{[1
]}

Kariya, H ^{[1
]}

Suzuki, N ^{[1
]}

Ueyama, K ^{[1
]}

Kitagawa, M ^{[1
]}

Kobayashi, H ^{[1
]}

机构：

[1] Tottori Univ, Dept Elect & Elect Engn, Tottori 6808552, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

基金：

日本学术振兴会;

关键词：

ZnS; ZnCdS; ZnMgS; quantum well; PL; MBE;

D O I：

10.1016/S0022-0248(00)00050-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the growth of ZnCdS/ZnMgS quantum wells (QWs) and their optical properties. The constituent alloy layers were grown by molecular beam epitaxy under a large S flux and a high substrate temperature. The layers exhibit high quality in terms of double crystal X-ray rocking curve and optical spectra including photoluminescence (PL), PL excitation and reflection spectra. The ZnCdS/ZnMgS QWs exhibit strong emission from the ZnCdS well(s) through photo-excitation at the ZnMgS barriers. By changing the growth condition of the QW structures, PL line width can be reduced. Such QWs show PL up to room temperature. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：135 / 139

页数：5

共 15 条

[1] CUBIC ZNCDS LATTICE-MATCHED TO GAAS - A NOVEL MATERIAL FOR SHORT-WAVELENGTH OPTOELECTRONIC APPLICATIONS [J].

FUJITA, S ;

FUNATO, M ;

HAYASHI, S ;

FUJITA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (06) :L898-L900

[2] Photoluminescence study of ZnS ZnMgS single quantum wells [J].

Ichino, K ;

Ueyama, K ;

Kariya, H ;

Suzuki, N ;

Kitagawa, M ;

Kobayashi, H .

APPLIED PHYSICS LETTERS, 1999, 74 (23) :3486-3488

[3]

Ichino K, 1998, BLUE LASER AND LIGHT EMITTING DIODES II, P30

[4]

Ichino K, 1996, BLUE LASER AND LIGHT EMITTING DIODES, P445

[5]

ICHINO K, 1999, JPN J APPL PHYS, V36, pL1283

[6]

ICHINO K, IN PRESS J APPL PHYS

[7] LOCALIZED EXCITONS IN CUBIC ZN1-XCDXS LATTICE-MATCHED TO GAAS [J].

KAWAKAMI, Y ;

FUNATO, M ;

FUJITA, S ;

YAMADA, Y ;

MASUMOTO, Y .

PHYSICAL REVIEW B, 1994, 50 (19) :14655-14658

[8] Lattice relaxation in ZnS epilayers grown on GaP [J].

Nam, S ;

Rhee, J ;

Yu, YM ;

Lee, CK ;

O, B ;

Lee, KS ;

Choi, YD .

APPLIED PHYSICS LETTERS, 1998, 72 (18) :2304-2306

[9] Quaternary alloy Zn1-xMgxSySe1-y [J].

Okuyama, H ;

Kishita, Y ;

Ishibashi, A .

PHYSICAL REVIEW B, 1998, 57 (04) :2257-2263

[10] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

OKUYAMA, H ;

NAKANO, K ;

MIYAJIMA, T ;

AKIMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B) :L1620-L1623

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