Lattice relaxation in ZnS epilayers grown on GaP

被引：13

作者：

Nam, S ^{[1
]}

Rhee, J

Yu, YM

Lee, CK

O, B

Lee, KS

Choi, YD

机构：

[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[2] Mokwon Univ, Dept Phys, Taejon 301729, South Korea

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 18期

关键词：

D O I：

10.1063/1.121354

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lattice relaxation of ZnS epilayers grown on GaP substrates by hot-wall epitaxy was investigated. The dependence of lattice constants and full widths at half-maximum of the double crystal rocking curves upon layer thickness was observed. The critical thickness for ZnS/GaP is found to be about 350 Angstrom. The epilayers thinner than the critical thickness have almost the same lattice constants. The strain due to the lattice mismatch is almost relaxed in epilayers thicker than 2.5 mu m. (C) 1998 American Institute of Physics.

引用

页码：2304 / 2306

页数：3

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