ATMOSPHERIC-PRESSURE ATOMIC LAYER EPITAXY OF ZNS USING ZN AND H2S

被引：10

作者：

KOUKITU, A

MIYAZAWA, T

IKEDA, H

SEKI, H

机构：

[1] Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 123卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(92)90013-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Atmospheric pressure atomic layer epitaxy (ALE) of ZnS is reported for the first time using Zn and H2S. It is confirmed that the growth rate is controlled by the self-limiting process itself. The ALE growth of ZnS is achieved in the substrate temperature range of 350-500-degrees-C and in the input partial pressure ranges of 2.6x 10(-5)-9.1x10(-5) atm for zinc and 2x10(-4)-2.4x10(-3) atm for sulphur. The value of the full width at half maximum (FWHM) for the diffraction pattern and lattice parameters perpendicular to the surface plane were obtained by the X-ray double-crystal diffraction measurement. The minimal values of FWHM were 284 and 205 s in the grown thickness of 0.5 and 0.9 mum, respectively.

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页码：95 / 100

页数：6

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