Determination of valence band splitting parameters in GaN

被引：47

作者：

Yamaguchi, AA

Mochizuki, Y

Sunakawa, H

Usui, A

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 305, Japan

[2] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Tsukuba, Ibaraki 305, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 08期

关键词：

D O I：

10.1063/1.367217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Valence band structures and their strain effects in GaN have been investigated by optical spectroscopy for thick GaN films with high optical quality grown by hydride vapor phase epitaxy. Excitons associated with the A, B, and C valence bands an clearly observed in reflectance measurements without modulation techniques. It is found that the exciton energies shift with the film thickness because of the relaxation of the residual, strain. From the quantitative analysis of this behavior, we have precisely determined the valence band splitting parameters in GaN as Delta(1)=10 meV, Delta(2)=5.5 meV, and Delta(3)=6.0 meV. (C) 1998 American Institute of Physics.

引用

页码：4542 / 4544

页数：3

共 19 条

[1] HETEROEPITAXIAL GROWTH AND THE EFFECT OF STRAIN ON THE LUMINESCENT PROPERTIES OF GAN FILMS ON (1120) AND (0001) SAPPHIRE SUBSTRATES [J].

AMANO, H ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08) :L1384-L1386

[2]

Bir G.L., 1972, Symmetry and strain induced effects in semiconductors

[3]

CHICHIBU S, 1996, P INT S BLUE LAS LIG, P202

[4] ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J].

DINGLE, R ;

SELL, DD ;

STOKOWSKI, SE ;

ILEGEMS, M .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04) :1211-+

[5] Variation of GaN valence bands with biaxial stress and quantification of residual stress [J].

Edwards, NV ;

Yoo, SD ;

Bremser, MD ;

Weeks, TW ;

Nam, OH ;

Davis, RF ;

Liu, H ;

Stall, RA ;

Horton, MN ;

Perkins, NR ;

Kuech, TF ;

Aspnes, DE .

APPLIED PHYSICS LETTERS, 1997, 70 (15) :2001-2003

[6] Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry [J].

Gil, B ;

Briot, O ;

Aulombard, RL .

PHYSICAL REVIEW B, 1995, 52 (24) :17028-17031

[7] Exciton region reflectance of homoepitaxial GaN layers [J].

Korona, KP ;

Wysmolek, A ;

Pakula, K ;

Stepniewski, R ;

Baranowski, JM ;

Grzegory, I ;

Lucznik, B ;

Wroblewski, M ;

Porowski, S .

APPLIED PHYSICS LETTERS, 1996, 69 (06) :788-790

[8] HIGH DISLOCATION DENSITIES IN HIGH-EFFICIENCY GAN-BASED LIGHT-EMITTING-DIODES [J].

LESTER, SD ;

PONCE, FA ;

CRAFORD, MG ;

STEIGERWALD, DA .

APPLIED PHYSICS LETTERS, 1995, 66 (10) :1249-1251

[9] HIGH-POWER GAN P-N-JUNCTION BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12A) :L1998-L2001

[10] High-power, long-lifetime InGaN multi-quantum-well-structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (8B) :L1059-L1061

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