Bias-Stress-Stable Solution-Processed Oxide Thin Film Transistors

被引：154

作者：

Jeong, Youngmin ^{[1
]}

Bae, Changdeuck ^{[1
]}

Kim, Dongjo ^{[1
]}

Song, Keunkyu ^{[1
]}

Woo, Kyoohee ^{[1
]}

Shin, Hyunjung ^{[2
]}

Cao, Guozhong ^{[3
]}

Moon, Jooho ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[2] Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea

[3] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2010年 / 2卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

amorphous oxide semiconductor; bias-stress stability; solution-processed transistor; gallium tin zinc oxide; ROOM-TEMPERATURE; MAGNESIUM-OXIDE; ZNO; SEMICONDUCTORS;

D O I：

10.1021/am900787k

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We generated a novel amorphous oxide semiconductor thin film transistor (AOS-TFT) that has exellent bias-stress stability using solution-processed gallium tin zinc oxide (GSZO) layers as the channel. The cause of the resulting stable operation against the gate bias-stress was studied by comparing the TFT characteristics of the GSZO layer with a tin-doped ZnO (ZTO) layer that lacks gallium. By photoluminescence, X-ray photoelectron, and electron paramagnetic resonance spectroscopy, we Found that the GSZO layer had a significantly lower oxygen vacancy, which act as trap sites, than did the ZTO film. The successful fabrication of a solution-processable GSZO layer reported here is the first step in realizing all-solution-processed transparent flexible transistors with air-stable, reproducible device characteristics.

引用

页码：611 / 615

页数：5

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