Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP

被引：6

作者：

Clausen, T ^{[1
]}

Leistiko, O ^{[1
]}

机构：

[1] Tech Univ Denmark, Mikroelektron Ctr, DK-2800 Lyngby, Denmark

来源：

APPLIED SURFACE SCIENCE | 1998年 / 123卷

关键词：

ohmic contacts; Schottky contacts; nanophases;

D O I：

10.1016/S0169-4332(97)00572-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have found that the electrical properties of carriers across the metal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area resulting in high values of the specific contact resistance to p-InP. For n(-)-InP, thermionic emission across nanosized inhomogeneities dominates the carrier flow when T-ann > 440 degrees C. (C) 1998 Elsevier Science B.V.

引用

页码：567 / 570

页数：4

共 4 条

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[2] TRANSPORT MECHANISMS IN LOW-RESISTANCE OHMIC CONTACTS TO P-INP FORMED BY RAPID THERMAL ANNEALING [J].

CLAUSEN, T ;

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APPLIED PHYSICS LETTERS, 1993, 62 (10) :1108-1109

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