TRANSPORT-PROPERTIES OF LOW-RESISTANCE OHMIC CONTACTS TO INP

被引：18

作者：

CLAUSEN, T ^{[1
]}

LEISTIKO, O ^{[1
]}

CHORKENDORFF, I ^{[1
]}

LARSEN, J ^{[1
]}

机构：

[1] TECH UNIV DENMARK, DEPT PHYS, DK-2800 LYNGBY, DENMARK

来源：

THIN SOLID FILMS | 1993年 / 232卷 / 02期

关键词：

D O I：

10.1016/0040-6090(93)90012-E

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The transport properties of conventional Au-based low-resistance ohmic contacts to n- and p-type InP have been investigated. For n-type InP, a good agreement between the minimum specific contact resistance and the bulk doping density is observed in accordance with an inverse bulk doping density dependence for the specific contact reistance. Drift and diffusion across a thermodynamically stable metalphosphide-InP junction is found to be the rate-limiting step of the low-resistance contacts to n-type InP. Tunneling is not observed, but rather a significantly effective Schottky barrier lowering is initially responsible for the low-resistance contacts. Significant Schottky barrier lowering is also observed for ohmic contacts to p-type InP, but no total transition from predominately thermionic emission to drift and diffusion is observed for low-resistance contacts to p-type InP, indicating that the contacts are not fully developed, and that further reduction of the specific contact resistance can be expected.

引用

页码：215 / 227

页数：13

共 33 条

[1] SPUTTERED NI-P AS AN OHMIC CONTACT TO N-INP, P-INGAAS AND AS A DIFFUSION BARRIER [J].