IMPROVEMENTS IN THE TOPOGRAPHY OF AUGENI-BASED OHMIC CONTACTS TO N-GAAS

被引：21

作者：

BALL, RK

机构：

来源：

THIN SOLID FILMS | 1989年 / 176卷 / 01期

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D O I：

10.1016/0040-6090(89)90363-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：55 / 68

页数：14

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