Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

被引：10

作者：

Heh, DW ^{[1
]}

Vogel, EM

Bernstein, JB

机构：

[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA

[2] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA

[3] Univ Maryland, Dept Mat & Nucl Engn, College Pk, MD 20742 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 19期

关键词：

D O I：

10.1063/1.1572466

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The impact of hot holes on gate oxide breakdown is studied by investigating devices under constant voltage stress with a different amount of preinjected substrate hot holes. The results show that oxide breakdown is independent of the amount of those preinjected hot holes, which suggests that defects generated by hot holes are not directly related to oxide breakdown during constant voltage stress conditions. (C) 2003 American Institute of Physics.

引用

页码：3242 / 3244

页数：3

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