Dependence of SiO2/Si interface structure on low-temperature oxidation process

被引：7

作者：

Hattori, T

Azuma, K

Nakata, Y

Shioji, M

Shiraishi, T

Yoshida, T

Takahashi, K

Nohira, H

Takata, Y

Shin, S

Kobayashi, K

机构：

[1] Musashi Inst Technol, Dept Elect & Elect Engn, Setagaya Ku, Tokyo 1588557, Japan

[2] Adv LCD Technol Dev Ctr Co Ltd, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan

来源：

APPLIED SURFACE SCIENCE | 2004年 / 234卷 / 1-4期

关键词：

interface structure; uniformity; electronic structure; photoelectron spectra; oxidation process;

D O I：

10.1016/j.apsusc.2004.05.044

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

By using the SPring-8 beam line, we have studied the dependence of the chemical structure and uniformity of three kinds of approximately 1 nm-thick silicon oxide films formed by using atomic oxygen at 300degreesC on the oxidation process. Among the SiO2Si interfaces formed by several oxidation methods using atomic oxygen, the uniformity was strongly dependent on the oxidation process and the highest uniformity was obtained with the krypton-mixed oxygen plasma oxidation, while the abruptness of the compositional transition layer was weakly dependent on the oxidation process. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：197 / 201

页数：5

共 21 条

[1]

Azuma K., 2003, ELECTROCHEMICAL SOC, V2, P614

[2] PHOTOEMISSION-STUDY OF SIOX (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 2) ALLOYS [J].