Origin of antimony segregation in GaInSb/InAs strained-layer superlattices

被引：133

作者：

Steinshnider, J

Harper, J

Weimer, M ^{[1
]}

Lin, CH

Pei, SS

Chow, DH

机构：

[1] Texas A&M Univ, Dept Phys, College Stn, TX 77843 USA

[2] Univ Houston, Ctr Space Vacuum Epitaxy, Houston, TX 77204 USA

[3] HRL Labs, LLC, Malibu, CA 90265 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.85.4562

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show how cross-sectional scanning tunneling microscopy may be used to reconstruct the Sb segregation profiles in GaInSb/InAs strained-layer superlattices. These profiles are accurately described by a one-dimensional model parametrizing the spatial evolution of an Sb seed at the InAs-on-GaInSb interface in terms of two-anion-layer exchange. We argue that the segregation seed, which decreases from 2/3 to 1/2 monolayer when growth conditions are made less anion rich, has its origin in the Sb-bilayer reconstruction maintained during GaInSb epitaxy.

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页码：4562 / 4565

页数：4

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