The effect of vacuum annealing on graphene

被引：229

作者：

Ni, Zhen Hua ^{[1
]}

Wang, Hao Min ^{[2
]}

Luo, Zhi Qiang ^{[1
]}

Wang, Ying Ying ^{[1
]}

Yu, Ting ^{[1
]}

Wu, Yi Hong ^{[2
]}

Shen, Ze Xiang ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

JOURNAL OF RAMAN SPECTROSCOPY | 2010年 / 41卷 / 05期

关键词：

graphene; Raman spectroscopy; doping; annealing; RAMAN-SPECTROSCOPY; GRAPHITE;

D O I：

10.1002/jrs.2485

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The effect of vacuum annealing on the properties of graphene is investigated by using Raman spectroscopy and electrical measurement. Heavy hole doping on graphene with concentration as high as 1.5 x 10(13) cm(-2) is observed after vacuum annealing and exposed to an air ambient. This doping is due to the H2O and O-2 adsorption on graphene, and graphene is believed to be more active to molecular adsorption after annealing. Such observation calls for special attention in the process of fabricating graphene-based electronic devices and gas sensors. On the other hand, because the quality of graphene remains high after the doping process, this would be an efficient and controllable method to introduce heavy doping in graphene, which would greatly help on its application in future electronic devices. Copyright (C) 2009 John Wiley & Sons, Ltd.

引用

页码：479 / 483

页数：5

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